LGE c1815 sot-23 free download

File name c1815_sot-23.pdf

C1815 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60 V, IE=0 0.1 A Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V VCE=10V, IC= 1mA, Transition frequency